書誌事項
- 公開日
- 1998-06
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0022-0248(98)00328-5
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract Uniform and smooth aluminum nitride (AlN) films have been grown on 2 in (0 0 0 1)sapphire substrates by a magnetron sputtering method. The crystal quality was measured by four-crystal X-ray reflectance diffraction, SEM images, RHEED patterns and so on. The crystal quality was found to be best when the N 2 /Ar flow ratio was increased to 16.7. Also a thickness uniformity of 0.23% was achieved on the 2 in substrate.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 189-190 448-451, 1998-06
Elsevier BV