Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

DOI PDF 被引用文献4件
  • T. Yoshitake
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
  • M. Yatabe
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
  • M. Itakura
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
  • N. Kuwano
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
  • Y. Tomokiyo
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
  • K. Nagayama
    Department of Aeronautics and Astronautics, Kyushu University, 6-10-1 Hakozaki, Higashiku, Fukuoka 812-8580, Japan

書誌事項

公開日
2003-10-13
DOI
  • 10.1063/1.1617374
公開者
AIP Publishing

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<jats:p>Amorphous iron silicide was reported to be semiconducting as well as β-FeSi2, and it has received considerable attention from both the physical and engineering points of view. However, there have been few studies and its basic properties are still unknown. We could grow the semiconducting nanocrystalline iron disilicide thin films by pulsed-laser deposition using an FeSi2 target. They consist of crystallites with diameters ranging from 3 to 5 nm. The carrier density and the mobility at 300 K were 1.5×1019 cm−3 and 35 cm/V s, respectively.</jats:p>

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