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- Davide Barreca
- ISTM-CNR and INSTM - Padova University, Department of Chemistry, 35131 Padova, Italy
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- Andrian Milanov
- Ruhr-University Bochum, Inorganic Materials Chemistry - Lehrstuhl für Anorganische Chemie II, D-44780 Bochum, Germany
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- Roland A. Fischer
- Ruhr-University Bochum, Inorganic Materials Chemistry - Lehrstuhl für Anorganische Chemie II, D-44780 Bochum, Germany
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- Anjana Devi
- Ruhr-University Bochum, Inorganic Materials Chemistry - Lehrstuhl für Anorganische Chemie II, D-44780 Bochum, Germany
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- Eugenio Tondello
- Padova University and INSTM, Department of Chemistry, 35131 Padova, Italy
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説明
<jats:p>Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O 1s, Hf 4f, Hf 4d and C 1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.</jats:p>
収録刊行物
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- Surface Science Spectra
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Surface Science Spectra 14 (1), 34-40, 2007-12-01
American Vacuum Society
