Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy

DOI PDF 1 Citations
  • N. Galbiati
    I.N.F.M. and Dipartimento di Fisica, Università di Milano, I-20133 Milano, Italy
  • L. Pavesi
    I.N.F.M. and Dipartimento di Fisica, Università di Trento, I-38050 Povo, Italy
  • E. Grilli
    I.N.F.M. and Dipartimento di Fisica, Università di Milano, I-20133 Milano, Italy
  • M. Guzzi
    I.N.F.M. and Dipartimento di Fisica, Università di Milano, I-20133 Milano, Italy
  • M. Henini
    Department of Physics, University of Nottingham, University Park, Nottingham NG7 2RD, Great Britain

Search this article

Description

<jats:p>The use of Be as a p-type dopant in AlxGa1−xAs and in modulation doped heterostructures grown by molecular beam epitaxy on (311)A oriented substrates is investigated. Photoluminescence and electrical measurements reveal that Be is incorporated as an acceptor in (311)A oriented AlxGa1−xAs with a slightly greater efficiency than in (100) oriented AlxGa1−xAs. The optical properties of the (311)A samples are better than those of the (100) oriented samples. An estimate of the Be binding energy yields 32±4 meV at x=0.240±0.004. A two-dimensional hole gas with a very high mobility (250 000 cm2/Vs at 100 mK) and with clear fractional quantum hall effect is formed in the modulation of Be doped heterostructures grown on the (311)A orientation.</jats:p>

Journal

Citations (1)*help

See more

Details 詳細情報について

Report a problem

Back to top