Epitaxial growth of Cd1−<i>x</i>Mn<i>x</i>Te films by ionized-cluster beams and their magneto-optical properties
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- Tsuyoshi Koyanagi
- Department of Electronics, Yamaguchi University, Ube 755, Japan
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- Kakuei Matsubara
- Department of Electronics, Yamaguchi University, Ube 755, Japan
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- Hiroshi Takaoka
- Department of Electronics, Kyoto University, Sakyo, Kyoto 606, Japan
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- Toshinori Takagi
- Department of Electronics, Kyoto University, Sakyo, Kyoto 606, Japan
説明
<jats:p>Epitaxial growth of Cd1−xMnxTe films with x ranging from 0 to 0.76 has been investigated on sapphire (0001) substrates using the ionized-cluster beam method. Magneto-optical properties of the films are discussed using Kramers–Kronig relation. Epitaxial films in the form of a single crystal can be obtained at low substrate temperatures up to 300 °C by the reactive composing of an accelerated CdTe cluster beam and a neutral MnTe cluster beam. When CdTe clusters are only ionized and accelerated, the composition of grown films varies largely, depending on the acceleration voltage. Faraday rotation for Cd1−xMnxTe films represents a band-edge dispersion, and the intensity increases as Mn concentration x increases; for the film with x=0.76, the maximum value of the Verdet constant was 0.72 °/cm G, which was two orders of magnitude larger than that of a CdTe (x=0) film. The magneto-optical figure of merit θF/α (H=5 kOe) for a Cd1−xMnxTe (x=0.76) epitaxial film was estimated to be about 400 ° at 660 nm.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 61 (8), 3020-3024, 1987-04-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1364233270606563456
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- DOI
- 10.1063/1.337852
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- ISSN
- 10897550
- 00218979
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- データソース種別
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- Crossref
