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- J. P. de Souza
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- E. Kiewra
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- Y. Sun
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- A. Callegari
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- D. K. Sadana
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- G. Shahidi
- IBM Thomas J. Watson Research Center 1 , Yorktown Heights, New York 10598, USA
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- D. J. Webb
- IBM Zürich Research Laboratory 2 , CH-8803 Rüschlikon, Switzerland
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- J. Fompeyrine
- IBM Zürich Research Laboratory 2 , CH-8803 Rüschlikon, Switzerland
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- R. Germann
- IBM Zürich Research Laboratory 2 , CH-8803 Rüschlikon, Switzerland
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- C. Rossel
- IBM Zürich Research Laboratory 2 , CH-8803 Rüschlikon, Switzerland
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- C. Marchiori
- IBM Zürich Research Laboratory 2 , CH-8803 Rüschlikon, Switzerland
書誌事項
- 公開日
- 2008-04-14
- DOI
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- 10.1063/1.2912027
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Highly effective passivation of GaAs surface is achieved by a thin amorphous Si (a-Si) cap, deposited by plasma enhanced chemical vapor deposition method. Capacitance voltage measurements show that carrier accumulation or inversion layer is readily formed in response to an applied electrical field when GaAs is passivated with a-Si. High performance inversion mode n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with an a-Si/high-k/metal gate stack. Drain current in saturation region of 220mA∕mm with a mobility of 885cm2∕Vs were obtained at a gate overdrive voltage of 3.25V in MOSFETs with 5μm gate length.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 92 (15), 153508-, 2008-04-14
AIP Publishing