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Engineering the breaking of time-reversal symmetry in gate-tunable hybrid ferromagnet/topological insulator heterostructures
Description
<jats:title>Abstract</jats:title><jats:p>Studying the influence of broken time-reversal symmetry on topological materials is an important fundamental problem of current interest in condensed matter physics and its understanding could also provide a route toward proof-of-concept spintronic devices that exploit spin-textured topological states. Here we develop a new model quantum material for studying the effect of breaking time-reversal symmetry: a hybrid heterostructure wherein a ferromagnetic semiconductor Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Mn<jats:sub><jats:italic>x</jats:italic></jats:sub>As, with an out-of-plane component of magnetization, is cleanly interfaced with a topological insulator (Bi,Sb)<jats:sub>2</jats:sub>(Te,Se)<jats:sub>3</jats:sub> by molecular beam epitaxy. Lateral electrical transport in this bilayer is dominated by conduction through (Bi,Sb)<jats:sub>2</jats:sub>(Te,Se)<jats:sub>3</jats:sub> whose conductivity is a few orders of magnitude higher than that of highly resistive Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Mn<jats:sub><jats:italic>x</jats:italic></jats:sub>As. Electrical transport measurements in a top-gated heterostructure device reveal a crossover from weak antilocalization to weak localization as the temperature is lowered or as the chemical potential approaches the Dirac point. This is accompanied by a systematic emergence of an anomalous Hall effect. These results are interpreted in terms of the opening of a gap at the Dirac point due to exchange coupling between the topological insulator surface state and the ferromagnetic ordering in Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Mn<jats:sub><jats:italic>x</jats:italic></jats:sub>As. The experiments described here show that well-developed III–V ferromagnetic semiconductors could serve as valuable components of artificially designed quantum materials aimed at exploring the interplay between magnetism and topological phenomena.</jats:p>
Journal
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- npj Quantum Materials
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npj Quantum Materials 3 (1), 2018-10-19
Springer Science and Business Media LLC
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Details 詳細情報について
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- CRID
- 1364233270730261760
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- ISSN
- 23974648
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- Data Source
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- Crossref