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A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based Stacking

DOI PDF 7 Citations

Journal

IEEE Journal of Solid-State Circuits

IEEE Journal of Solid-State Circuits 47 (1), 107-116, 2012-01

Institute of Electrical and Electronics Engineers (IEEE)

Citations (7)*help

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Details 詳細情報について

CRID

1364233270772271360
DOI

10.1109/jssc.2011.2164731
ISSN

1558173X

00189200
Web Site

http://xplorestaging.ieee.org/ielx5/4/6109882/06025219.pdf?arnumber=6025219
Data Source
- Crossref

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