Ferroelectric behavior of epitaxial Bi2VO5.5 thin films on Si(100) formed by pulsed-laser deposition

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  • M. Joseph
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
  • H. Y. Lee
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
  • H. Tabata
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
  • T. Kawai
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan

抄録

<jats:p>Thin films of Bi2VO5.5 have been prepared epitaxially using a pulsed-laser deposition method on a Si(100) substrate using TiN as a buffer layer and SrTiO3 as a seed layer. The films have smooth surface morphology with atomically flat terraces and steps of 4 Å in height. The ferroelectric characterization shows a spontaneous polarization of 2.2 μC/cm2 and a coercive field (Ec) of 22 kV/cm. The leakage current obtained is about 5×10−6 A/cm2 at a drive voltage of ±2 V.</jats:p>

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