-
- Y. M. Manz
- Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
-
- A. Christ
- Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
-
- O. G. Schmidt
- Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
-
- T. Riedl
- Technische Universität Braunschweig, Mendelssohnstrasse 2, D-38106 Braunschweig, Germany
-
- A. Hangleiter
- Technische Universität Braunschweig, Mendelssohnstrasse 2, D-38106 Braunschweig, Germany
説明
<jats:p>Self-assembled InP quantum dots, embedded in Ga0.52In0.48P and grown by solid source molecular-beam epitaxy, exhibit strong structural and optical anisotropy. Photoluminescence measurements reveal that the quantum dots are elongated in [11̄0] crystal direction and the optical transitions of both the dots and the surrounding GaInP material dominate for light polarized along this direction, whereas embedded compressively strained GaxIn1−xP quantum wells behave isotropically. The comparison of the optical gain of a strained GaxIn1−xP quantum well laser and a threefold stacked quantum-dot laser in [110] and [11̄0] directions (edge emission) emphasizes this difference. The gain of the quantum-well laser shows no directional dependence. The quantum-dot laser reveals significantly larger gain for light propagating perpendicular to the dot elongation. Thus, particular care has to be taken to align the cavities of InP/GaInP quantum-dot lasers in [110] direction.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 83 (5), 887-889, 2003-08-04
AIP Publishing