In As ∕ Al Sb quantum cascade lasers emitting below 3μm

  • J. Devenson
    UMR5507 CNRS/Université Montpellier 2 Centre d’Electronique et de Microoptoélectronique de Montpellier, , 34095 Montpellier, France
  • R. Teissier
    UMR5507 CNRS/Université Montpellier 2 Centre d’Electronique et de Microoptoélectronique de Montpellier, , 34095 Montpellier, France
  • O. Cathabard
    UMR5507 CNRS/Université Montpellier 2 Centre d’Electronique et de Microoptoélectronique de Montpellier, , 34095 Montpellier, France
  • A. N. Baranov
    UMR5507 CNRS/Université Montpellier 2 Centre d’Electronique et de Microoptoélectronique de Montpellier, , 34095 Montpellier, France

書誌事項

公開日
2007-03-12
DOI
  • 10.1063/1.2714098
公開者
AIP Publishing

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説明

<jats:p>Quantum cascade lasers emitting below 3μm are demonstrated. The lasers based on the InAs∕AlSb material system emit at 2.95–2.97μm in pulsed mode with threshold current densities near 3kA∕cm2 at 84K and operate up to room temperature. No degradation has been observed in laser performances compared with InAs∕AlSb quantum cascade lasers emitting at 3.14–3.35μm. The obtained results show no influence of the L valley in InAs on operation of these short wavelength quantum cascade lasers.</jats:p>

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