Aligned Growth of Millimeter‐Size Hexagonal Boron Nitride Single‐Crystal Domains on Epitaxial Nickel Thin Film
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- Junhua Meng
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Xingwang Zhang
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Ye Wang
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Zhigang Yin
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Heng Liu
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Jing Xia
- Key Lab of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
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- Haolin Wang
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Jingbi You
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Peng Jin
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Denggui Wang
- Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
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- Xiang‐Min Meng
- Key Lab of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
説明
<jats:p>Atomically thin hexagonal boron nitride (h‐BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene‐based devices. For these applications, synthesis of high‐quality and large‐area h‐BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter‐size single‐crystal h‐BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single‐crystal h‐BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large‐size h‐BN domains results mainly from the reduced Ni‐grain boundaries and the improved crystallinity of Ni film. Furthermore, the h‐BN domains show well‐aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large‐scale high‐quality h‐BN layers for electronic applications.</jats:p>
収録刊行物
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- Small
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Small 13 (18), 1604179-, 2017-03-07
Wiley
