Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

詳細情報 詳細情報について

• CRID

  1364233271227249664

• DOI

  10.1016/s0022-0248(02)01846-8

• ISSN

  00220248

• Web Site

  https://api.elsevier.com/content/article/PII:S0022024802018468?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0022024802018468?httpAccept=text/plain

• データソース種別

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