Determination of tellurium in gallium arsenide by graphite furnace AAS.

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  • 黒鉛炉原子吸光法によるヒ化ガリウム中のテルルの定量
  • コクエンロ ゲンシ キュウコウホウ ニ ヨル ヒカ ガリウムチュウ ノ テルル

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Description

Various dopants in gallium arsenide have been determined by graphite furnace AAS. This method has a merit for trace analysis. Direct injection of the sample is desirable for avoiding contamination after dissolving gallium arsenide. But atomic absorption of Te was strongly influenced by molecular absorption of matrix. We tried to seperate matrix from the sample. Gallium in 7M HCl was extracted with diisopropyl ether. Arsenide was selectively evaporated from the furnace. Dopants in gallium arsenide are usually determined in the order of ppm by graphite furnace AAS. Nickel solution as a matrix modifier was doped into the furnace and dried before the atomization of Te. Ashing temperature(500°C) and atomizing temperature (2000°C) was set. Molecular absorption of arsenide didn't appear in doping of 1 μg of Ni. Atomic absorption of Te was about five times sensitized. As the results, these procedures enabled the determination of Te in the order of 0.2 wt. ppm in gallium arsenide.

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 36 (8), 499-502, 1987

    The Japan Society for Analytical Chemistry

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