酸化物ターゲットを用いたＤＣスパッタＩＴＯ膜

木村 浩, 渡辺 弘, 石原 哲, 鈴木 義雄, 伊東 孝

doi:10.3131/jvsj.30.546

書誌事項

タイトル別名

DC magnetron sputtered ITO films applied with indium tin oxide targets.
サンカブツターゲットオモチイタ DC スパッタ ITO マク

この論文をさがす

説明

Indium tin oxide (ITO) films were deposited by DC magnetron sputtering using ITO targets. Low resistivity of 1.4×10^-4 Ω·cm and high transmittance of 85% at 550 nm were obtained under optimum conditions, depending on a SnO₂ content (020 wt.%) in the ITO targets, substrate temperature, and oxygen partial pressure. Films with the low resistivity can be obtained in rather wide sputtering conditions in comparison with in using metal targets. Due to a change in the sputtering conditions, especially the substrate temperature, the optimum SnO₂ content in the target was changed. When the substrate was at room temperature, the film with a resistivity of 4.0×10^-4 Ω ·cm was prepared for the target of 5 wt.%SnO₂, and at 400°C a film with 1.4×10^-4 Ω·cm was prepared for the target with 10 wt.%SnO₂, with good reproducibility. In these cases, decreasing of SnO₂ content in the films was found and (400) preferential orientation of indium oxide (In₂O₃) was observed in the films by X-ray diffraction technique.

収録刊行物

真空

真空 30 (6), 546-554, 1987

一般社団法人日本真空学会

詳細情報詳細情報について

CRID: 1390001204063197440

NII論文ID: 130000863856

NII書誌ID: AN00119871

DOI: 10.3131/jvsj.30.546

ISSN: 18809413; 05598516

NDL書誌ID: 3142159

Web Site: http://id.ndl.go.jp/bib/3142159; https://ndlsearch.ndl.go.jp/books/R000000004-I3142159

本文言語コード: ja

データソース種別

JaLC
NDLサーチ
Crossref
CiNii Articles

抄録ライセンスフラグ: 使用不可

書き出し

問題の指摘