書誌事項
- タイトル別名
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- Synthesis and Characterization of Carbon Nitride Thin Films by Pulsed Laser Deposition Using Radical Beam Source.
- ラジカルビーム ゲン オ モチイタ パルスレーザー タイセキホウ ニ ヨル チッカ タンソ ハクマク ノ ゴウセイ ト ヒョウカ
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抄録
Carbon nitride (CNx ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N2 gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N2. N 1s XPS spectra show the existence of N-sp2C and N-sp3C bonds in the films. The fraction of N-sp3C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-spC (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-sp2C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.
収録刊行物
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- 真空
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真空 43 (3), 273-276, 2000
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204063727488
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- NII論文ID
- 10004561665
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 5360974
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可