書誌事項
- タイトル別名
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- Transition from Active to Passive Oxidation on Si(111)7*7 Surface
- Si 111 7 7 ヒョウメン ジョウ デ ノ アクティブ カラ パッシブ サンカ エ ノ センイ
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抄録
We performed in situ scanning tunneling microscopy observation of oxygen reaction on the Si(111)7×7 surface at high temperatures. In spite of passive oxidation regime, we found that voids having the depth just one bilayer were formed at the initial stage of reaction. We found that the number density of the void was well represented by power laws. We applied the two-dimensional nucleation theory to this void formation and found that the critical nuclei were i = 1.46(647 K) and i = 14.7(751 K). We found the transition from active to passive oxidation with constant substrate temperature and oxygen exposure rate. The transition was quantitatively reproduced by the numerical simulations.
収録刊行物
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- 真空
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真空 48 (5), 350-352, 2005
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204064288896
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- NII論文ID
- 10015675203
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 7385086
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可