Transition from Active to Passive Oxidation on Si(111)7*7 Surface

  • SUZUKI Yoshikazu
    Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University
  • FUKUDA Tsuneo
    Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University
  • NAKAYAMA Hiroshi
    Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University

Bibliographic Information

Other Title
  • Si(111)7×7表面上でのアクティブからパッシブ酸化への遷移
  • Si 111 7 7 ヒョウメン ジョウ デ ノ アクティブ カラ パッシブ サンカ エ ノ センイ

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Abstract

We performed in situ scanning tunneling microscopy observation of oxygen reaction on the Si(111)7×7 surface at high temperatures. In spite of passive oxidation regime, we found that voids having the depth just one bilayer were formed at the initial stage of reaction. We found that the number density of the void was well represented by power laws. We applied the two-dimensional nucleation theory to this void formation and found that the critical nuclei were i = 1.46(647 K) and i = 14.7(751 K). We found the transition from active to passive oxidation with constant substrate temperature and oxygen exposure rate. The transition was quantitatively reproduced by the numerical simulations.

Journal

  • Shinku

    Shinku 48 (5), 350-352, 2005

    The Vacuum Society of Japan

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