書誌事項
- タイトル別名
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- Surface Stress during Plasma Oxidation and following Nitridation.
- プラズマサン チッカ チュウ ノ シリコン ヒョウメン オウリョク ヘンドウ
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We have observed a stress relaxation of a silicon oxide film made by plasma oxidation with the following nitridation. The radical nitridation reduces the compressive surface stress of the film expansion about 40-80%. This relaxation is larger than that of electron irradiation on the oxide film, which can reduce a disorder-induced surface stress. AES measurement shows the concentration of nitrogen does not precipitate on the SiO2/Si interface but is uniform in the film and is only 3 atom.% in the film.
収録刊行物
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- 真空
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真空 45 (3), 127-129, 2002
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204064736256
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- NII論文ID
- 10008202783
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 6144090
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可