書誌事項
- タイトル別名
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- The Simulation of Charging-up of Insulator under Electron Beam Irradiation.
- ソクホウ デンシ ビーム ショウシャ ニ トモナウ ゼツエンブツ タイデン ノ シミュレーション
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A simulation model is developed to express the time dependent charging-up process of insulators under electron beam irradiation. The electron deposition and the energy deposition distributions produced by the incident electron beam are calculated by a Monte Carlo simulation of electron trajectories. The trajectories of slow secondary electrons and the Auger electrons are calculated considering the electric field. The electron beam induced conduction is calculated with taking into account the surface boundary of the specimen. The time-dependent spatial distributions of the charge accumulated, the electric potential built, and the backscattered secondary yield by the Gaussian-shaped electron beam irradiation are obtained. The positive and negative charging processes of a bulk PMMA by 1 keV and 5 keV electron beam irradiation, respectively are expressed.
収録刊行物
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- 真空
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真空 43 (2), 151-156, 2000
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204064750464
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- NII論文ID
- 10004561461
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 5298193
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可