Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices
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- YAKUSHIJI Kay
- Institute for Materials Research, Tohoku University
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- TAKANASHI Koki
- Institute for Materials Research, Tohoku University
Bibliographic Information
- Other Title
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- 高スピン分極フルホイスラー合金薄膜とスピンエレクトロニクスデバイス
- コウスピン ブンキョク フルホイスラー ゴウキン ハクマク ト スピンエレクトロニクスデバイス
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Abstract
The recent development of the study on half-metallic full-Heusler alloy thin films and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy films with high L21 structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60% at room temperature. Our recent results on the current-perpendicular-to-plane magnetoresistance (CPP-GMR) devices with Co2MnSi films are also shown. The resistance change-area product (ΔRA) at room temperature was 19 mΩμm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. The enhanced ΔRA is considered to originate from the large spin polarization in a high-quality L21 Co2MnSi film.<br>
Journal
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- Shinku
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Shinku 49 (12), 700-705, 2006
The Vacuum Society of Japan
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Details 詳細情報について
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- CRID
- 1390001204064829312
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- NII Article ID
- 10018457461
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 8624037
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed