Formation Processes of the Au/Si(111)-.GAMMA.(.RAD.3 * .RAD.3) R30.DEG. Surface

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  • KADOHIRA Takuya
    Kagami Memorial Laboratory for Materials Science and Technology, Waseda University
  • NISHIDA Keiji
    Department of Materials Science and Engineering, Waseda University
  • NAKAGAWA Akihisa
    Department of Materials Science and Engineering, Waseda University
  • MATSUO Shingo
    Department of Materials Science and Engineering, Waseda University
  • EGUCHI Toyoaki
    Department of Materials Science and Engineering, Waseda University
  • OSAKA Toshiaki
    Kagami Memorial Laboratory for Materials Science and Technology, Waseda University Department of Materials Science and Engineering, Waseda University

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Other Title
  • Ａｕ／Ｓｉ（１１１）‐γ（√３　×　√３）Ｒ３０°表面形成過程の評価
  • Au Si 111 ガンマ 3 3 R30 ヒョウメン ケイセイ カテイ ノ ヒョウカ

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Description

We have investigated formation processes of the γ (√3×√3) R30° (γ√3) reconstructed surface for the Au/Si (111) system by using Auger electron spectroscopy, reflection high energy electron diffraction and scanning tunneling microscopy. Depositing Au onto the Si (111) - (7 × 7) substrate at a temperature of 600°C, we have successfully obtained the well-defined γ√3 surface with a single domain, which is extremely flat at an atomic scale. On the basis of the analysis of the surface composition, we have demonstrated that one monolayer of Au constitutes the γ√3 surface. Furthermore, it has been revealed that excess Au atoms at the surface contribute not to the formation of the surface reconstruction but to that of the liquid islands of Au.

Journal

  • Shinku

    Shinku 46 (4), 347-351, 2003

    The Vacuum Society of Japan

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