化合物半導体In2Te3の規則―メソスコピック転移

DOI

Journal

  • Nihon Kessho Gakkaishi

    Nihon Kessho Gakkaishi 39 (Supplement), 82-82, 1997

    The Crystallographic Society of Japan

Details 詳細情報について

  • CRID
    1390001204088873984
  • NII Article ID
    130000786352
  • DOI
    10.5940/jcrsj.39.supplement_82
  • ISSN
    18845576
    03694585
  • Text Lang
    ja
  • Data Source
    • JaLC
    • Crossref
    • CiNii Articles

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