Development of Low-Temperature Process for Printed Electronics

DOI Web Site
  • UEMURA Sei
    National Institute of Advanced Industrial Science and Technology Flexible Electronics Research Center, Printed Electronics Device Team
  • YOSHIDA Manabu
    National Institute of Advanced Industrial Science and Technology Flexible Electronics Research Center, Printed Electronics Device Team
  • TOKUHISA Hideo
    National Institute of Advanced Industrial Science and Technology Flexible Electronics Research Center, Printed Electronics Device Team

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抄録

In order to fabricate an electric device that is printed on a plastic substrate successfully, it is important to decrease the process temperature as much as possible. Furthermore, low-cost processes and materials need to be developed so that they have a wide variety of uses. With this in mind, we have developed a low-temperature preparation method for electric materials such as semiconductors, insulators, and electrodes. In this paper, we discuss novel techniques for preparing high-performance SiO2 using vacuum ultraviolet light and commercial Ag ink with decreased resistivity using pressure treatment in order to fabricate electric devices on reasonably priced plastic substrates. In addition, we also introduce a method for reducing the costs of developing printed devices by using Cu ink.

収録刊行物

  • 日本画像学会誌

    日本画像学会誌 51 (5), 509-514, 2012

    一般社団法人 日本画像学会

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