On the Temperature Dependence of Dispersion Parameters in the Transient Photoconductivity of Amorphous Semiconductors

DOI Web Site
  • DING Jinli
    Department of Physics and Electronics, University of Osaka Prefecture
  • NAITO Hiroyoshi
    Department of Physics and Electronics, University of Osaka Prefecture
  • OKUDA Masahiro
    Department of Physics and Electronics, University of Osaka Prefecture

Bibliographic Information

Other Title
  • アモルファス半導体の過渡光電流における分散パラメータの温度依存性について
  • アモルファス ハンドウタイ ノ カト コウデンリュウ ニ オケル ブンサン パ

Search this article

Abstract

Temperature dependence of the dispersion parameter determined from transient photocurrent traces has been numerically examined for various localized-state distributions in amorphous semiconductors. It is found that the dispersion parameter is proportional to temperature even for non-exponential distributions. This result indicates that the existence of the exponential distribution of localized state cannot be concluded only from the proportionality relationship between the dispersion parameter and temprature.

Journal

Details 詳細情報について

Report a problem

Back to top