書誌事項
- タイトル別名
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- The Implantation of Si and Formation of Silicide by Molten Salt Electrochemical Process.
- ヨウユウエン デンキ カガク プロセス ニヨル Si ノ チュウニュウ ト シ
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抄録
Electrochemical Implantation of Si and formation of suicide have been achieved at 450°C using the new electrolyte LiCl (54.5mol%)-KCl (40.5mol%)-LiF (5.0mol%), which contains K2SiF6 (0.05-0.07mol%). The electrode potential of Si (IV)/Si (0) (Si (IV) 0.06mol%) has been determined to be 1.6V vs. Li+/Li. When the iron and nickel electrodes were cathodically polarized to a more negative potential than 1.6V, silicon was implanted onto the surface of both of the electrodes. Powdered silicide was obtained when iron and silicon were codeposited on the iron electrode from the same electrolyte containing both K2SiF6 (0.05-0.07mol%) and Fe (II) ion (0.01-0.02mol%) for several hours.
収録刊行物
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- 表面技術
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表面技術 46 (12), 1173-1179, 1995
一般社団法人 表面技術協会
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詳細情報 詳細情報について
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- CRID
- 1390001204114866560
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- NII論文ID
- 10001749221
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- NII書誌ID
- AN1005202X
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- ISSN
- 18843409
- 09151869
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- NDL書誌ID
- 3642059
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可