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Fabrication of Ultra-large Scale Integrated by Electroless Neutral Copper Plating.
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- NAWAFUNE Hidemi
- Fac. of Sci., Konan Univ.
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- NAKAO Seiichiro
- Fac. of Sci., Konan Univ.
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- MIZUMOTO Shozo
- Fac. of Sci., Konan Univ.
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- MURAKAMI Yosiki
- Matsushita Technoresearch, INC.
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- HASIMOTO Sin
- Matsushita Electronics Corp.
Bibliographic Information
- Other Title
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- 中性無電解銅めっきによるＵＬＳＩ銅配線の形成
- チュウセイ ムデンカイ ドウメッキ ニ ヨル ULSI ドウ ハイセン ノ ケイセイ
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Description
Copper promises to replace aluminum in ULSI metallization thanks to its better conductivity and reliability. ULSI metallization is formed by electroless neutral copper plating using cobalt (II) compound as a reducing agent. Results show good storage stability, and trenches/holes on silicon wafers are filled by copper deposits. Hydrogen gas did not evolved in the plating reaction, and not effect from alkaline metal ions was seen. This process may thus be applied to ULSI matallization, using electroless neutral plating with cobalt (II) compound as a reducing agent.
Journal
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- Journal of The Surface Finishing Society of Japan
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Journal of The Surface Finishing Society of Japan 50 (4), 374-377, 1999
The Surface Finishing Society of Japan
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Details 詳細情報について
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- CRID
- 1390001204115703808
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- NII Article ID
- 10002112228
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- NII Book ID
- AN1005202X
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- COI
- 1:CAS:528:DyaK1MXisVCrtb0%3D
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- ISSN
- 18843409
- 09151869
- http://id.crossref.org/issn/09151869
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- NDL BIB ID
- 4707974
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed