書誌事項
- タイトル別名
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- Formation of ULSI Interconnection by Copper Electrodeposition Process Using the Pre-adsorption of Polyethylene Glycol Derivative
- ポリエチレン グリコール ユウドウタイ ノ ヨビ キュウチャク オ リヨウスル ドウデンセキ プロセス ニ ヨル ULSI ビサイ ハイセン ノ ケイセイ
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抄録
In the basic concept of conventional electroplating, the additives, which determine the properties of the deposited film, are included in the plating bath. In this report, ULSI copper minute wiring formation by a new process is described. The process relies on the pre-adsorption of the polyethylene glycol bis (1, 2, 3-benzotriazolylether) [PBTA] synthesized from polyethylene glycol and benzotriazole, and copper electrodeposition from an acid copper sulfate bath without additives. The copper electrodeposition was done using an insoluble anode in the basic bath without additives after PBTA was pre-adsorbed on the silicon wafer with copper seed. The adsorbed PBTA on the surface of the copper seed strongly inhibited copper electrodeposition. In this process, a minute hole can be filled with copper without causing voids and seams due to the effect of site-selective adsorption of PBTA.
収録刊行物
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- 表面技術
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表面技術 58 (7), 425-429, 2007
一般社団法人 表面技術協会
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詳細情報 詳細情報について
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- CRID
- 1390001204116631168
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- NII論文ID
- 130000148814
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- NII書誌ID
- AN1005202X
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- COI
- 1:CAS:528:DC%2BD2sXotFaqtr8%3D
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- ISSN
- 18843409
- 09151869
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- NDL書誌ID
- 8880345
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可