Spin Split Cyclotron Resonance in a 2-D Electron System at Very High Magnetic Fields

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  • Spin Split Cyclotron Resonance in a 2-D

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Abstract

Cyclotron resonance of the 2-Dimensional Electron System in GaAs/Ga0.66Al0.34As heterojunctions has been studied in very high (∼90 T) magnetic fields. The resonance is found to split into two components due to the energy dependence of the electron g-factor. The exact magnitude of the splitting is slightly smaller than observed in bulk GaAs, but is found to be carrier concentration dependent. The intensity of the two different transitions is also found to be carrier concentration dependent, despite the fact that the electron g-factor of the Lowest Landau state is close to zero. This behaviour is interpreted as due to collective electron effects similar to results observed at lower densities and lower temperatures in lower magnetic fields.

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