Superconductor-Insulator Transition in Granular Films of Tin.

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  • Watanabe Michio
    Cryogenic Center, University of Tokyo, Yayoi 2–11–16, Bunkyo–ku, Tokyo 113
  • Shimada Hiroshi
    Cryogenic Center, University of Tokyo, Yayoi 2–11–16, Bunkyo–ku, Tokyo 113
  • Kobayashi Shun–ichi
    Department of Physics, School of Science, University of Tokyo, Hongo 7–3–1, Bunkyo–ku, Tokyo 113
  • Ootuka Youiti
    Cryogenic Center, University of Tokyo, Yayoi 2–11–16, Bunkyo–ku, Tokyo 113

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Abstract

To study the superconductor-insulator (SI) transition in two-dimensional systems, we measured electrical resistance of Sn granular films with 24 nm grains over a temperature range from 9 K to 50 mK. A distinct SI transition was observed when the normal-conducting sheet resistance RN is increased, showing that neither flat tail nor quasi reentrance is the intrinsic effect in granular systems. If we define RN as the sheet resistance at 77 K, the critical sheet resistance Rc for the SI transition exists between 6.0 kΩ and 6.9 kΩ. For the samples which showed superconductivity at low temperatures, we analyzed the resistance based on the vortex Kosterlitz-Thouless (KT) transition. Evaluating from the extrapolation of KT transition temperature Tc→0, Rc is 6.4 kΩ, which is very close to RQ≡h/4e2.

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