Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
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- Takenaka Nobuyuki
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
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- Inoue Masataka
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
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- Inuishi Yoshio
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
書誌事項
- タイトル別名
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- Influence of Inter Carrier Scattering o
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Influences of carrier-carrier scattering on the electron distribution function in GaAs has been examined by the Monte Carlo calculation taking into account electron-electron and/or electron-hole scatterings. The calculated results were compared with the experimental distribution functions determined from the band-to-band recombination spectra under high electric fields.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 47 (3), 861-868, 1979
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204182855040
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- NII論文ID
- 110001975623
- 130003896102
- 210000088354
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1979JPSJ...47..861T
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- COI
- 1:CAS:528:DyaE1MXlvVGmtrc%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2062051
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可