Polytypes and Excitons in GaSe<SUB>1−<I>x</I></SUB>S<I><SUB>x</SUB></I> Mixed Crystals

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  • Serizawa Hiroshi
    The Research Institute for Iron, Steel and Other Metals, Tohoku University
  • Sasaki Yoshiro
    The Research Institute for Iron, Steel and Other Metals, Tohoku University
  • Nishina Yuichiro
    The Research Institute for Iron, Steel and Other Metals, Tohoku University

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  • Polytypes and Excitons in GaSe1-xSx Mixed Crystals
  • Polytypes and Excitons in GaSe1 xSx Mix
  • Polytypes and Excitons in GaSe<sub>1-<i>x</i></sub>S<sub><i>x</i></sub> Mixed Crystals

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Abstract

We have investigated the quantitative relationship between the polytypes and the direct and indirect exciton gap energies in GaSe1−xSx mixed crystals. The X-ray diffraction analysis shows that GaSe1−xSx is the ε-type for 0(GaSe)≤x\lesssim0.01, the γ-type for 0.05\lesssimx\lesssim0.4, the β-type for 0.5\lesssimx≤1(GaS), and a mixture of the ε- and γ-types for 0.01\lesssimx\lesssim0.03. The direct and indirect exciton gap energies are determined from optical absorption and luminescence excitation spectra. The plots of the direct and indirect exciton gap energies vs the compositional parameter x show kinks in the neighborhood of x=0.4. Furthermore, a jump in the indirect exciton gap energy is found at around x=0.02. These anomalies at x=0.02 and 0.4 are attributed to the ε-γ and γ-β polytype transformations, respectively.

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