F-Center Formation at Highly Excited Triplet States of Self-Trapped Excitons in KCl
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- Soda Kazuo
- Department of Crystalline Material Science, Faculty of Engineering, Nagoya University
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- Itoh Noriaki
- Department of Crystalline Material Science, Faculty of Engineering, Nagoya University
書誌事項
- タイトル別名
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- F Center Formation at Highly Excited Tr
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Measurements have been made of the creation of the F centers by the optical excitation of the self-trapped excitons with a light pulse from a tunable dye laser. It is found that the ratio of the F-center concentration created by the light pulse to the triplet exciton concentration at the incidence of the light pulse depends on the integrated photon flux Φ as a{1−exp (−bΦ)}, where a and b are constants. Kinetic models are developed for treating the non-radiative processes of the highly excited self-trapped exciton, and the efficiency of the F-center creation from the highly excited triplet exciton was determined using the experimentally obtained parameters a and b. It is found that the efficiency is almost constant between 1.77 and 2.08 eV above the lowest triplet exciton and becomes higher above 2.58 eV. The dependence of the efficiency on energy is discussed in terms of existing models of the defect formation.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 48 (5), 1618-1624, 1980
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204183271296
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- NII論文ID
- 110001964946
- 130003737998
- 210000088491
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1980JPSJ...48.1618S
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- COI
- 1:CAS:528:DyaL3cXksFynt74%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2179475
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可