Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire
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- Ohmura Yamichi
- Toshiba R and D Center, Toshiba Corporation
書誌事項
- タイトル別名
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- Galvanomagnetic Effect for Holes and th
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Magnetoresistance (MR) anisotropy measurement previously performed at room temperature for 1–2 μm thick p-type (001) silicon on sapphire (SOS) has been extended down to 77 K. In order to explain these anisotropies, the valence band structure is numerically calculated by the k·p method along with deformation-potential-constant formalism assuming the lateral compressive strain (∼4×10−3) in silicon. In the four ⟨110⟩ directions for the upper strain-split mJ=±3⁄2 band, the derivative (dE⁄dk2) becomes very small at hole energies above ∼10 meV, resulting in a tetragonally-warped, constant-energy surface with four long ⟨110⟩ protrusions, which may be responsible for room-temperature “four ⟨110⟩-ellipsoid-like” MR anisotropies. Although low-temperature MR anisotropies cannot be explained in terms of the low-energy ellipsoid, the high hole mobility which exceeds the electron one (A. C. Ipri: Appl. Phys. Lett. 22 (1973) 76) may be due to rapid decrease of hole effective mass to the ellipsoidal one.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 47 (1), 145-152, 1979
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204183545856
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- NII論文ID
- 110001964598
- 130003895948
- 210000088127
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1979JPSJ...47..145O
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- COI
- 1:CAS:528:DyaE1MXltFKiu7w%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2056483
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可