Change of Electronic Structure Induced by Magnetic Transitions in CeBi
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- Kimura Shin-ichi
- UVSOR Facility, Institute for Molecular Science
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- Okuno Mitsuru
- Graduate School of Science and Technology, Kobe University
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- Kitazawa Hideaki
- Nanomaterials Laboratory, National Institute for Materials Science
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- Ishiyama Fumihiko
- NTT Energy and Environment Systems Laboratories
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- Sakai Osamu
- Department of Physics, Tokyo Metropolitan University
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The temperature dependence of the electronic structure of CeBi arising from two types of antiferromagnetic transitions based on optical conductivity [σ(ω)] was observed. The σ(ω) spectrum continuously and discontinuously changes at 25 and 11 K, respectively. Between these temperatures, two peaks in the spectrum rapidly shift to the opposite energy sides as the temperature changes. Through a comparison with the band calculation as well as with the theoretical σ(ω) spectrum, this peak shift was explained by the energy shift of the Bi 6p band due to the mixing effect between the Ce 4f Γ8 and Bi 6p states. The single-layer antiferromagnetic (+−) transition from the paramagnetic state was concluded to be of the second order. The marked changes in the σ(ω) spectrum at 11 K, however, indicated the change in the electronic structure was due to a first-order-like magnetic transition from a single-layer to a double-layer (++−−) antiferromagnetic phase.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 73 (8), 2041-2044, 2004
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204185789312
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- NII論文ID
- 210000104947
- 110001954929
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- NII書誌ID
- AA00704814
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- BIBCODE
- 2004JPSJ...73.2041K
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 7051642
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可