Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si

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  • Effects of External Shear Stress on the

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A tight-binding type electronic theory (molecular approximation) is used to calculate the formation energy of the double kink Edk for a 1⁄2[110](1\bar11) (perfect glide set) screw dislocation in covalent semiconductor Si. Effects of external shear stress on the double kink nucleation process are investigated in detail. It is shown that the calculated stress dependence of the Edk is in good agreement with the experimental results of the activation energy for the screw dislocation motion in Si.

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