Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
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- Nakahara Jun’ichir\={o}
- Department of Physics, Faculty of Science, Hokkaido University
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- Minomura Shigeru
- Department of Physics, Faculty of Science, Hokkaido University
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- Kukimoto Hiroshi
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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- Minami Fujio
- National Institute for Research in Inorganic Materials
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- Era Koh
- National Institute for Research in Inorganic Materials
書誌事項
- タイトル別名
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- Existence of Mobility Edge in Amalgamat
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It is reported that the temperature dependence of luminescence intensity in AlxGa1−xAs and Cd1−xMnxTe obeys the same relation 1⁄(1+A exp (T⁄T0)) as is observed in amorphous Si:H and chalcogenide glasses. This temperature dependence is well understood by the assumption that a mobility edge exists near the edge of amalgamation-type bands in mixed crystals, and that localized states exist continuously below the mobility edge. The same dependence is observed for the luminescence intensity from bound magnetic polarons in Cd.95Mn.05Te.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 56 (7), 2252-2255, 1987
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204186210048
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- NII論文ID
- 110001960489
- 210000093409
- 130003899552
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1987JPSJ...56.2252N
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- COI
- 1:CAS:528:DyaL2sXltVGnsbw%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 3139566
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
