Diffuse Scattering in the High-Temperature(1×1) State of Si(111)

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  • Iwasaki Hiroshi
    The Institute of Scientific and Industrial Research, Osaka University
  • Hasegawa Shigehiko
    The Institute of Scientific and Industrial Research, Osaka University
  • Akizuki Makoto
    The Institute of Scientific and Industrial Research, Osaka University
  • Li Sung-Te
    The Institute of Scientific and Industrial Research, Osaka University
  • Nakamura Shogo
    The Institute of Scientific and Industrial Research, Osaka University
  • Kanamori Junjiro
    Department of Physics, Faculty of Science, Osaka University

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  • Diffuse Scattering in the High Temperat

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Diffuse spots slightly displaced from the (\sqrt3×\sqrt3) positions were observed in the high-temperature (1×1) state of Si (111) by low-energy electron diffraction. The spots showed threefold 3m symmetry and rotated around the \sqrt3 positions with changes in primary energy. These are reproduced by kinematic calculations for a surface configuration with adatoms distributed randomly over both the threefold-hollow and threefold atop sites of a (1×1) substrate with the exclusion of forming bonds with a common substrate atoms.

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