Effect of Pressure on the Magnetic and Electrical Transition Point of the NiAs-Type NiS
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- Anzai Shuichiro
- Japan Atomic Energy Research Institute
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- Ozawa Kunio
- Japan Atomic Energy Research Institute
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In order to study the nature of the first-order antiferromagnetic transition in NiS the electrical resistivity in the vicinity of the transition point has been investigated at the hydrostatic pressures up to 7 kbar. The transition has characteristics of semiconductive-metallic transformation. The transition point, observed at 230°K at atmospheric pressure, is lowered as the hydrostatic pressure is increased, with the rate (dTt⁄dP)=−(6.0±0.3) deg./kbar. The transition can be described in terms of the electronic rearrangement in d-orbitals of nickel atoms between localized-collective electronic states.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 24 (2), 271-274, 1968
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204186327296
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- NII論文ID
- 40018663491
- 130003891870
- 210000080340
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1968JPSJ...24..271A
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- COI
- 1:CAS:528:DyaF1cXntlegug%3D%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 8501522
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可