- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- 【Updated on June 30, 2025】Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
-
- Oyanagi Hiroyuki
- Electrotechnical Laboratory
-
- Sakamoto Tsunenori
- Electrotechnical Laboratory
-
- Sakamoto Kunihiro
- Electrotechnical Laboratory
-
- Matsushita Tadashi
- National Laboratory for High Energy Physics
-
- Yao Takafumi
- Electrotechnical Laboratory
-
- Ishiguro Takehiko
- Electrotechnical Laboratory
Bibliographic Information
- Other Title
-
- Si Ge Si Monolayer Heterostructure on S
Search this article
Description
Si/Ge/Si monolayer heterostructures grown on Si(100) by molecular beam epitaxy (MBE) have been studied by a surface sensitive EXAFS technique. It is shown that the heterointerfaces at several tens of angstrom below the surface can be probed by monitoring fluorescence yield with a high energy resolution detector in a total reflection geometry. The formation of ordered Si/Ge/Si heterointerface is evidenced by a Fourier transform analysis of the Ge K–EXAFS. In the Si/Ge/Si heterostructure, the determined Ge–Si distance suggests a large contribution of bond length relaxation.
Journal
-
- Journal of the Physical Society of Japan
-
Journal of the Physical Society of Japan 57 (6), 2086-2092, 1988
THE PHYSICAL SOCIETY OF JAPAN
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001204188275584
-
- NII Article ID
- 210000094032
- 110001968505
-
- NII Book ID
- AA00704814
-
- BIBCODE
- 1988JPSJ...57.2086O
-
- COI
- 1:CAS:528:DyaL1cXlt1Smurg%3D
-
- ISSN
- 13474073
- 00319015
-
- NDL BIB ID
- 3191263
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL Search
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed