Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys

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  • Theoretical Studies of Disorder Scatter

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Abstract

Disorder scattering in semiconductor alloys is studied by employing Green’s function method. As a first approximation, Yonezawa’s self-consistent Green’s function is applied to the problem. The scattering potential of the alloying atoms is determined empirically by comparing experimental and theoretical band edge shifts. Calculation with In1−xGaxAs case demonstrates that the present calculation gives much lower mobility than Brooks’ in a good agreement with the experiments.

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