First Single Crystal Growth of the Transuranium Filled-Skutterudite Compound NpFe<sub>4</sub>P<sub>12</sub> and Its Magnetic and Electrical Properties

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  • Aoki Dai
    Institute for Materials Research, Tohoku University
  • Haga Yoshinori
    Advanced Science Research Center, Japan Atomic Energy Agency
  • Homma Yoshiya
    Institute for Materials Research, Tohoku University
  • Sakai Hironori
    Advanced Science Research Center, Japan Atomic Energy Agency
  • Ikeda Shugo
    Advanced Science Research Center, Japan Atomic Energy Agency
  • Shiokawa Yoshinobu
    Institute for Materials Research, Tohoku University Advanced Science Research Center, Japan Atomic Energy Agency
  • Yamamoto Etsuji
    Advanced Science Research Center, Japan Atomic Energy Agency
  • Nakamura Akio
    Advanced Science Research Center, Japan Atomic Energy Agency
  • Onuki Yoshichika
    Advanced Science Research Center, Japan Atomic Energy Agency Graduate School of Science, Osaka University

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  • First Single Crystal Growth of the Transuranium Filled-Skutterudite Compound NpFe4P12 and Its Magnetic and Electrical Properties

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We succeeded in growing single crystals of NpFe4P12 using the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization, and specific heat. This is the first single crystal growth of transuranium filled-skutterudite compounds. NpFe4P12 is found to order ferromagnetically below TC=23 K. The magnetic moment is directed along the ⟨100⟩ direction with the saturated moment of 1.35 μB/Np. The large resistivity value indicates that NpFe4P12 might be a semimetal, where the 5f electrons are localized with a 5f3 configuration, indicating Np4+. The electronic specific heat coefficient γ is found to be small, γ\\simeq10 mJ/(K2·mol), which is consistent with the low carrier system.

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