Shifting Donor–Acceptor Photoluminescence in N-doped ZnO
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- Makino Takayuki
- Department of Material Science, University of Hyogo RIKEN (Institute of Physical and Chemical Research)
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- Tsukazaki Atsushi
- Institute for Materials Research, Tohoku University
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- Ohtomo Akira
- Institute for Materials Research, Tohoku University
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- Kawasaki M.
- Institute for Materials Research, Tohoku University
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- Koinuma Hideomi
- Graduate School of Frontier Science, The University of Tokyo
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We have grown nitrogen-doped ZnO films by two kinds of epitaxial methods on lattice-matched ScAlMgO4 substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor–acceptor-pair transition region. The analysis of the excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence can be explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process that provides showing better electrical properties was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptors has been evaluated to be ≈170 meV, which is independent of the nitrogen concentration.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 75 (7), 073701-, 2006
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204189524992
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- NII論文ID
- 110004777961
- 210000106214
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- NII書誌ID
- AA00704814
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- BIBCODE
- 2006JPSJ...75g3701M
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 7973637
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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