Studies of Acoustoelectric Domain Formation in Semiconducting CdS

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  • Ishida Akira
    Department Electrical Engineering, Faculty of Engineering, Osaka University
  • Inuishi Yoshio
    Department Electrical Engineering, Faculty of Engineering, Osaka University

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Experimental studies of acoustoelectric domain formation in semiconducting CdS were performed at room temperature by sample notching, injection of phonon packets and superposition of spike voltage pulses on the main d. c. pulses. Two different modes of current oscillations were observed. Mode I is characterized by constant oscillation period and Mode II by field-dependent period. In the notched samples, mode transition from Mode I to II was observed for appropriate notch depth. This reveals that Mode II is ascribed to locked domain sources such as electric field concentration. On the other hand, domain triggering in Mode I oscillation can be performed in the homogeneous samples either by phonon injection or by spike pulse superposition. This indicates that Mode I is attributed to travelling domain sources such as phonon concentration or shock-generated acoustic flux. Based on these experimental results, domain formations due to electric and acoustic non-uniformities were discussed.

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