Hall Effect in Silicon Inversion Layers under Strong Magnetic Fields
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- Wakabayashi Jun-ichi
- Department of Physics, Gakushuin University
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- Kawaji Shinji
- Department of Physics, Gakushuin University
書誌事項
- タイトル別名
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- Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
- Hall Effect in Silicon MOS Inversion La
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説明
The channel conductance and the Hall voltage in a wide and a long rectangular samples of n-type MOS inversion layers on Si(100) surfaces are measured in a strong magnetic field of 100 kOe at 1.6 K. A method of transformation from the conductance and the Hall voltage data to the transverse conductivity σxx and the Hall conductivity σxy in arbitrary magnetic field strength based on the Hall-effect field correction are described. The conductivity σxx and σxy are compared with σxx measured directly in a Corbino disk sample and σxy predicted by the quantum transport theory and the electron mobility data. Good agreement is obtained only in the wide sample by the use of a modified Hall-effect field correction. Effects of the electrode resistance, the side edges and the sample geometry are discussed in connection to the modification of the Hall-effect field correction.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 44 (6), 1839-1849, 1978
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204189845504
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- NII論文ID
- 210000087167
- 210000085005
- 110001975356
- 130003737478
- 130003894383
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- NII書誌ID
- AA00704814
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- COI
- 1:CAS:528:DyaE1cXksFWqu70%3D
- 1:CAS:528:DyaE2MXkvV2gtLo%3D
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- ISSN
- 13474073
- 00319015
- http://id.crossref.org/issn/00319015
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- NDL書誌ID
- 1945537
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- 本文言語コード
- en
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- データソース種別
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- NDLサーチ
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