Galvanomagnetic Effects in Cadmium Antimonide

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  • Kawasaki Tatsuo
    Department of Electronics, Faculty of Engineering, Kyoto University
  • Tanaka Tetsuro
    Department of Electronics, Faculty of Engineering, Kyoto University

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Galvanomagnetic effects were measured on p- and n-CdSb single crystals above 77°K in weak magnetic fields (≤7500 gauss). No anisotropy of the Hall coefficient was observed below 250°K. The Hall mobility at 200°K was 390, 250 and 650 cm2/v·sec for holes and 520, 440 and 560 cm2/v·sec for electrons along the [100], [010] and [001]-directions, respectively. The mobility of holes along the [001]-direction was constant up to 3×1016cm−3. The anisotropy of the transverse magnetoresistance coefficient was found to be larger for p- than for n-CdSb. The longitudinal magnetoresistance in n-CdSb does not vanish in any direction; in p-CdSb it does not vanish in the [100] and in the [010]-directions. A four valley model is proposed for the valence band structure.

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