Hot Carrier Double Injection in <I>n</I>-InSb
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- Tosima Soitiro
- Laboratories RCA, Inc
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- Ando Koji
- Laboratories RCA, Inc
Bibliographic Information
- Other Title
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- Hot carrier double injection in n-InSb
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Abstract
The double injection phenomena in n-InSb were studied theoretically and experimentally over a wide range of current density at 77°K. As the electric field E increases, electrons and holes are injected into the bulk and the current density j is approximately proportional to E3⁄2 for high injection levels at fields up to a few tens of volt/cm. As the field increases further the j–E curve becomes flat. In the high current region, a current-controlled negative resistances is observed.<BR>The theory for the double injection was extended to include hot electron effects. In n-InSb, the ambipolar density velocity can change its sign from that of the low field density velocity, if the field is high enough to heat up the electrons, and the injected hole density is sufficiently high. The flattening in the j–E curve was explained theoretically taking into account the sign change in the density velocity. The sign change in combination with the blocking of the hole current flow at the cathode also accounts for the negative resistance.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 23 (4), 812-819, 1967
THE PHYSICAL SOCIETY OF JAPAN
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Keywords
Details 詳細情報について
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- CRID
- 1390001204192476928
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- NII Article ID
- 210000080169
- 110001974007
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- NII Book ID
- AA00704814
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- BIBCODE
- 1967JPSJ...23..812T
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- COI
- 1:CAS:528:DyaF1cXlsVChsA%3D%3D
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 8501416
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed