Galvanomagnetic anisotropy and the energy-dependent warping of the valence bands in p-Si

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  • Galvanomagnetic Anisotropy and the Energy-Dependent Warping of the Valence Bands in <I>p</I>-Si
  • Erratum: “Galvanomagnetic Anisotropy and the Energy-Dependent Warping of the Valence Bands in <i>p</i>-Si”

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According to experimental work by Miyazawa, Suzuki and Maeda, directional differences of weak-field galvanomagnetic coefficients in p-Si change with temperature and eventually reverse sign unlike in p-Ge. To clarify the correlation between these results and the warped valence bands, a calculation method for galvanomagnetic coefficients is developed, which includes a description of constant-energy surfaces in terms of cubic harmonics.<BR>Numerical evaluations are made using “band-anisotropy” parameters determined from the k-p perturbation equation with inverse-mass parameters and spin-orbit splitting thus far obtained. The results well reproduce many experimental features, especially the sign-reversal temperature Tc∼130°K in purest samples. Decrease in Tc with increasing impurities is explained from the mixing of ionized impurity scattering. Unusual decreases in the Hall factor R0⁄R∞ with increasing temperature between 100 and 300°K in p-Si are also derived from the energy-dependent warping in the valence bands.

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