Quantum Transport Study of Silicon and Germanium by 4-mm Wave Cyclotron Resonance below 1°K

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  • Quantum transport study of silicon and germanium by 4-mm wave cyclotron resonance below 1 K

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Abstract

Electron scattering by phonons and neutral impurities as well as electron capture by the latter in silicon and germanium have been studied between 0.5 and 4.2°K through He3-coolant at the frequency of 71 GHz. The scattering relaxation time by phonons in ultra-high purity materials is compared with the calculation by Ito et al. and by Meyer.<BR>In addition, a spin polarization effect on neutral impurity scattering at the quantum limit, hωs>kBT, has been studied for n-type materials. This problem has been treated in a way similar to the e−-H atomic scattering and a simple analytical calculation for the scattering of spin polarized electrons by spin polarized donors is carried out on the basis of Schwartz’s work. This calculation yields an essential agreement with the experimental results. For silicon doped with phosphorus and germanium doped with indium, spin polarization effects on electron capture by neutral impurity are observed.

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