Note on Spin-Lattice Relaxation of Shallow Donors in Wurtzite-Type Semiconductors
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- Shimizu Tatsuo
- Department of Electronics, Faculty of Technology, Kanazawa University
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- Morigaki Kazuo
- Institute for Solid State Physics, University of Tokyo
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The spin-lattice relaxation rates of shallow donors in wurtzite-type semiconductors are calculated. The admixture of the excited p-states with the ground 1s-state through the k-linear term in the conduction band and the trigonal component of the impurity potential plays an important role in the present relaxation mechanism in contrast with the case of the many valley semiconductors. In particular, it is shown that the k linear term in the Γ7 conduction band may contribute to the spin-lattice relaxation rate of shallow donors in CdS at liquid helium temperatures, taking into account the concentration dependent relaxation process. This relaxation process occurs through the hopping motion of donor electrons accompanied by reversal of spin orientation.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 28 (6), 1468-1473, 1970
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204194459520
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- NII論文ID
- 110001961373
- 130003734943
- 210000081572
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1970JPSJ...28.1468S
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- COI
- 1:CAS:528:DyaE3cXkt12qs7Y%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 8502452
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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