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- Fukamachi Tomoe
- Saitama Institute of Technology
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- Hirano Kenji
- Saitama Institute of Technology
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- Yoshizawa Masami
- Saitama Institute of Technology
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- Negishi Riichirou
- Saitama Institute of Technology
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- Ju Dongying
- Saitama Institute of Technology
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- Tohyama Masahiko
- Saitama Institute of Technology
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- Kanematsu Yoshinobu
- Saitama Institute of Technology
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- Hirano Keiichi
- Institute of Material Structure Science, KEK-PF, High Energy Accelerator Research Organization
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- Kawamura Takaaki
- Department of Mathematics and Physics, University of Yamanashi
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抄録
By measuring X-rays from a bent Si single crystal, we have observed the amplification of the reflected beams from the surface. The amplification is observed when the incident angle is adjusted to minimize the effective linear absorption coefficient due to the dynamical diffraction effect. When we increase the width of the incident X-rays along the incident azimuth, we observe on increase in reflected beam intensity. The amplification can be explained by the addition of the electric fields of the propagating beams along hyperbolic trajectories in the bent crystal to those of the reflected beams.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 78 (10), 103001-103001, 2009
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204197127296
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- NII論文ID
- 130005437150
- 40016772337
- 210000108003
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- NII書誌ID
- AA00704814
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 10390167
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可